schottky barrier rectifiers apd245 data sheet 1 aug. 2011 rev 1. 2 bcd semiconductor manufacturing limited cathode line by marking features low forward voltage drop very small conduction losses high surge capability surge overload rating up to 50a peak value applications low voltage high frequency inverters dc-dc converters free wheeling polarity protection figure 1. package types of apd245 figure 2. pin configuration of apd245 pin configuration do-41 do-15 do-214ac vd/vg package (do-41/do-15) cathode anode vr package (do-214ac) anode cathode cathode line by marking
schottky barrier rectifiers apd245 data sheet 2 aug. 2011 rev 1. 2 bcd semiconductor manufacturing limited ordering information package temperature range part number marking id packing type lead free green lead free green do-41 -65 to 125 o c apd245vd-e1 apd245vd-g1 d245vd 245vdg bulk apd245vdtr-e1 apd245vdtr-g1 d245vd 245vdg ammo do-15 -65 to 125 o c apd245vg-e1 apd245vg-g1 d245vg 245vgg bulk apd245vgtr-e1 APD245VGTR-G1 d245vg 245vgg ammo do-214ac -65 to 125 o c apd245vrtr-g1 245vrg tape & reel circuit type package vd: do-41 e1: lead free apd245 - tr: blank: bulk ammo or tape & reel vg: do-15 bcd semiconductor's pb-free products, as designated with "e1" suffix in the part number, are rohs compliant. products with "g1" suffix are available in green packages. g1: green vr: do-214ac
schottky barrier rectifiers apd245 data sheet 3 aug. 2011 rev 1. 2 bcd semiconductor manufacturing limited parameter symbol value unit maximum repetitive peak reverse voltage v rrm 45 v maximum dc blocking voltage v dc 45 v maximum rms voltage v rms 32 v average rectified forward current 0.375 " (9.5mm) lead length i f (av) 2.0 a non-repetitive peak forward surge current 8.3ms single half si ne-wave on rated load i fsm 50 a operating junction temperature range t j -65 to 125 o c storage temperature range t stg -65 to 150 o c absolute maximum ratings (t a =25 o c, unless otherwise noted) (note 1) note 1: stresses greater than those lis ted under "absolute maximum ratings" may cause permanent damage to the device. these are stress ratings only, and functi onal operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. exposure to "absolute maximum ra tings" for extended periods may affect device reliability.
schottky barrier rectifiers apd245 data sheet 4 aug. 2011 rev 1. 2 bcd semiconductor manufacturing limited parameter symbol values unit typical thermal resistance ja do-41/do-15 52 o c/w do-214ac 90 thermal characteristics (t a =25 o c, unless otherwise noted) parameter symbol values unit forward voltage @ i f =2.0a v f 0.5 v reverse current @ rated v r (note 2) t a =25 o c i r 0.5 ma t a =100 o c 10 electrical characteristics (t a =25 o c, unless otherwise noted) note 2: pulse test: 300 s pulse width, 1.0% duty cycle. figure 3. forward current derating curve figure 4. typical instantaneous forward characteristics typical performance characteristics (t a =25 o c, unless otherwise noted) 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 average forward current (a) ambient temperature ( o c) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 instantaneous forward current (a) instantaneous forward voltage (v) t j =25 o c t j =125 o c
schottky barrier rectifiers apd245 data sheet 5 aug. 2011 rev 1. 2 bcd semiconductor manufacturing limited figure 5. maximum non-repetitive figure 6. typical reverse characteristics figure 7. typical junction capacitance typical performance ch aracteristics (continued) peak forward surge current 110100 10 15 20 25 30 35 40 45 50 t j =t j (max) single half sine-wave peak forward surge current (a) number of cycle at 60hz 0 10203040 1 10 100 1000 10000 instantaneous reverse current ( a) peak reverse voltage (v) t j =25 o c t j =125 o c 0.1 1 10 10 100 junction capacitance (pf) reverse voltage (v) t j =25 o c f=1.0mhz v sig =50mvp-p
schottky barrier rectifiers apd245 data sheet 6 aug. 2011 rev 1. 2 bcd semiconductor manufacturing limited mechanical dimensions unit: mm(inch) do-41 0. 700(0. 028) 0. 900(0. 035) 25. 400(1. 000) min 4. 200(0.165) 5. 200(0.205) 2. 000(0.080) 2. 700(0.107) dia. dia. 25. 400(1. 000) min cathode line by marking
schottky barrier rectifiers apd245 data sheet 7 aug. 2011 rev 1. 2 bcd semiconductor manufacturing limited mechanical dimens ions (continued) unit: mm(inch) do-15 0.700(0.028) 0.900( ) 25. 400(1.000) min dia. dia. 25. 400(1.000) min cathode line by marking 5.800(0.228) 7.600(0.299) 2.600(0.102) 3.600(0.142) 0.035
schottky barrier rectifiers apd245 data sheet 8 aug. 2011 rev 1. 2 bcd semiconductor manufacturing limited mechanical dimens ions (continued) unit: mm(inch) do-214ac 3. 990(0.157) 4. 600(0.181) 2.400(0.094) 2.790(0.110) 1.250(0.049) 1.650(0.065) 4. 800(0. 189) 5. 280(0. 208) 0. 760(0. 030) 1. 520(0. 060) 1. 900(0. 075) 2. 290(0. 090) 0. 100(0.004) 0. 310(0.012) 0.152(0. 006) 0.305(0. 012) cathode line by marking
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited
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